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dc.contributor.authorDai, Ming-Zhien_US
dc.contributor.authorChen, Yen-Hoen_US
dc.contributor.authorChuang, Ming-Yenen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2019-04-03T06:40:48Z-
dc.date.available2019-04-03T06:40:48Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn1424-8220en_US
dc.identifier.urihttp://dx.doi.org/10.3390/s140916287en_US
dc.identifier.urihttp://hdl.handle.net/11536/25381-
dc.description.abstractIn this study, we investigate the keys to obtain a sensitive ammonia sensor with high air stability by using a low-cost polythiophene diode with a vertical channel and a porous top electrode. Poly(3-hexylthiophene) (P3HT) and air-stable poly(5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene) (PQT-12) are both evaluated as the active sensing layer. Two-dimensional current simulation reveals that the proposed device exhibits numerous connected vertical nanometer junctions (VNJ). Due to the de-doping reaction between ammonia molecules and the bulk current flowing through the vertical channel, both PQT-12 and P3HT VNJ-diodes exhibit detection limits of 50-ppb ammonia. The P3HT VNJ-diode, however, becomes unstable after being stored in air for two days. On the contrary, the PQT-12 VNJ-diode keeps an almost unchanged response to 50-ppb ammonia after being stored in air for 25 days. The improved storage lifetime of an organic-semiconductor-based gas sensor in air is successfully demonstrated.en_US
dc.language.isoen_USen_US
dc.subjectammoniaen_US
dc.subjectgas sensoren_US
dc.subjectpolythiopheneen_US
dc.subjectsolid-state sensorsen_US
dc.titleAchieving a Good Life Time in a Vertical-Organic-Diode Gas Sensoren_US
dc.typeArticleen_US
dc.identifier.doi10.3390/s140916287en_US
dc.identifier.journalSENSORSen_US
dc.citation.volume14en_US
dc.citation.issue9en_US
dc.citation.spage16287en_US
dc.citation.epage16295en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000343106600039en_US
dc.citation.woscount9en_US
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