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dc.contributor.authorCHEN, TPen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorLIN, HCen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorHSIEH, WYen_US
dc.contributor.authorCHEN, LJen_US
dc.date.accessioned2014-12-08T15:04:02Z-
dc.date.available2014-12-08T15:04:02Z-
dc.date.issued1994-04-04en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.111777en_US
dc.identifier.urihttp://hdl.handle.net/11536/2538-
dc.description.abstractA polycrystalline silicon-boron (Si-B) layer with a thickness of 180 nm was grown on recrystallized amorphous silicon in an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system using pure SiH4 and B2H6 (1% in H-2). The growth temperature was as low as 550-degrees-C. Auger electron spectroscopy and secondary ion mass spectroscopy showed that the boron concentration is extraordinarily high (2 x 10(22) cm-3). From the analysis of transmission electron diffraction patterns, the phase of silicon hexaboride (SiB6) was found to be present in the as-deposited Si-B layer. After thermal annealing, most of the boron atoms in the Si-B layer were found to be immobile. The presence of SiB6 in the Si-B layer may lead to the reduction of boron diffusivity in the Si-B layer during thermal annealing.en_US
dc.language.isoen_USen_US
dc.titleLOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.111777en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume64en_US
dc.citation.issue14en_US
dc.citation.spage1853en_US
dc.citation.epage1855en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NE02500035-
dc.citation.woscount8-
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