Title: | Reduced Residual Stress and Enhanced Performance of GaN-Based LEDs Prepared by Liquid Phase Deposition Silicon Oxide-Nano Patterned Sapphire Substrate |
Authors: | Chang, Sheng-Chieh Hsieh, Cheng-Yu Lin, Bo-Wen Cho, Hsin-Ju Hsu, Wen-Ching Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering |
Issue Date: | 1-Jan-2014 |
Abstract: | A simple liquid phase deposition (LPD) method was used to introduce nano SiO2 on sapphire substrates to fabricate nano-patterned sapphire substrates with top oxide layers (MNPSS). The X-ray diffraction (XRD) rocking curves and etching pit density (EPD) analyses show that the quality of MNPSS-GaN was better than that of GaN grown on flat sapphire substrates (FLAT-GaN). The photoluminescence (PL) spectrums showed a blueshift of MNPSS-GaN peak position compared with FLAT-GaN. The analyses of XRD reciprocal space map (RSM) revealed that this shift was caused by the residual stress. (C) 2014 The Electrochemical Society. All rights reserved. |
URI: | http://dx.doi.org/10.1149/2.0111410ssl http://hdl.handle.net/11536/25401 |
ISSN: | 2162-8742 |
DOI: | 10.1149/2.0111410ssl |
Journal: | ECS SOLID STATE LETTERS |
Volume: | 3 |
Issue: | 11 |
Begin Page: | R53 |
End Page: | R55 |
Appears in Collections: | Articles |