標題: Reduced Residual Stress and Enhanced Performance of GaN-Based LEDs Prepared by Liquid Phase Deposition Silicon Oxide-Nano Patterned Sapphire Substrate
作者: Chang, Sheng-Chieh
Hsieh, Cheng-Yu
Lin, Bo-Wen
Cho, Hsin-Ju
Hsu, Wen-Ching
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-一月-2014
摘要: A simple liquid phase deposition (LPD) method was used to introduce nano SiO2 on sapphire substrates to fabricate nano-patterned sapphire substrates with top oxide layers (MNPSS). The X-ray diffraction (XRD) rocking curves and etching pit density (EPD) analyses show that the quality of MNPSS-GaN was better than that of GaN grown on flat sapphire substrates (FLAT-GaN). The photoluminescence (PL) spectrums showed a blueshift of MNPSS-GaN peak position compared with FLAT-GaN. The analyses of XRD reciprocal space map (RSM) revealed that this shift was caused by the residual stress. (C) 2014 The Electrochemical Society. All rights reserved.
URI: http://dx.doi.org/10.1149/2.0111410ssl
http://hdl.handle.net/11536/25401
ISSN: 2162-8742
DOI: 10.1149/2.0111410ssl
期刊: ECS SOLID STATE LETTERS
Volume: 3
Issue: 11
起始頁: R53
結束頁: R55
顯示於類別:期刊論文