標題: Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
作者: Chang, TC
Liu, PT
Yan, ST
Yang, FM
Sze, SM
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 2005
摘要: The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC :O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC :O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC :O film, which is attributed to the high barrier height induced by electron trapping in the SiC :O film. (C) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25434
http://dx.doi.org/10.1149/1.1850859
ISSN: 0013-4651
DOI: 10.1149/1.1850859
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 152
Issue: 2
起始頁: G144
結束頁: G147
顯示於類別:期刊論文


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