完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, CTen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorLai, CWen_US
dc.contributor.authorLiu, WHen_US
dc.contributor.authorPu, SCen_US
dc.contributor.authorChou, PTen_US
dc.contributor.authorChou, YHen_US
dc.contributor.authorChiu, HTen_US
dc.date.accessioned2014-12-08T15:37:04Z-
dc.date.available2014-12-08T15:37:04Z-
dc.date.issued2005en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://hdl.handle.net/11536/25450-
dc.identifier.urihttp://dx.doi.org/10.1039/b503681jen_US
dc.description.abstractSyntheses of CdSe/ ZnTe/ ZnS (core/shell/shell) type-II quantum dots (QDs) are reported. Structural characterization was made via TEM, EDX, XPS and XRD. Photophysical properties were investigated via the interband emission (CdSe -> ZnTe) and its associated quantum efficiency as well as relaxation dynamics. In comparison to the weak emission (Phi(f) similar to 4 x 10(-3) in toluene) of CdSe/ ZnTe (3.9/ 0.5 nm), capping ZnS (0.4 nm in thickness) enhances the CdSe -> ZnTe interband emission by similar to 30 fold (Phi(f) similar to 0.12), whereas the peak wavelength shifts only slightly to the red. By encapsulating dihydrolipoic acid ( DHLA), water-soluble CdSe/ ZnTe/ ZnS QDs were also prepared, and they exhibited an interband emission at y930 nm with an emission yield of similar to 0.1. Femtosecond pulse excitation (lambda(ex) similar to 1200 nm) measurement estimated a two- photon absorption cross section, sigma, of similar to 70 x 10(-50) cm(4) s photon(-1) for DHLA-capped CdSe/ ZnTe/ ZnS in water, supporting its suitability for the use as near-infrared (NIR) dyes in biomedical imaging.en_US
dc.language.isoen_USen_US
dc.titleSyntheses and photophysical properties of type-II CdSe/ZnTe/ZnS (core/shell/shell) quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/b503681jen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume15en_US
dc.citation.issue33en_US
dc.citation.spage3409en_US
dc.citation.epage3414en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000231277400008-
dc.citation.woscount38-
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