完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLOU, YSen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:04:02Z-
dc.date.available2014-12-08T15:04:02Z-
dc.date.issued1994-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.278510en_US
dc.identifier.urihttp://hdl.handle.net/11536/2545-
dc.description.abstractBased on the simple interfacial-layer theory, the extraction methods for the interface parameters of the metal-semiconductor contact have been developed and applied to characterize both the Schottky-barrier diodes and the ohmic contacts in a self-consistent manner. It has been shown that the physical parameters at the metal-semiconductor interface can be extracted from the I-V characteristics of the Schottky-barrier diodes and the degradation of the thermal-equilibrium barrier height due to the thermal cycle can be directly modeled in terms of the extracted interface parameters. Besides, using the extracted parameters, the specified surface-treatment process can be evaluated by the extracted thermal-equilibrium barrier height, and thus the strongly process-dependent specific contact resistivity rho(c) of the ohmic contacts can be theoretically calculated by a modified tunneling model considering the impurity band. Furthermore, by comparing the simulated results and the measured rho(c) data deduced from the Al and Ti contacts on both doping types of the Si-substrate, satisfactory agreements have been obtained.en_US
dc.language.isoen_USen_US
dc.titleA SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.278510en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume41en_US
dc.citation.issue4en_US
dc.citation.spage558en_US
dc.citation.epage566en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NG44100014-
dc.citation.woscount21-
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NG44100014.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。