完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, CWen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorTsai, TMen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:37:06Z-
dc.date.available2014-12-08T15:37:06Z-
dc.date.issued2005en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/25473-
dc.identifier.urihttp://dx.doi.org/10.1149/1.1833666en_US
dc.description.abstractEffects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si-O-2 bonds appear at the surface of SiCN film after O-2 plasma ashing. The formation of the oxidized layer, SiOxCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O-2 plasma ashing. (C) 2004 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleEffects of oxygen plasma ashing on barrier dielectric SiCN filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1833666en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume8en_US
dc.citation.issue1en_US
dc.citation.spageG11en_US
dc.citation.epageG13en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000228356800038-
dc.citation.woscount7-
顯示於類別:期刊論文