標題: High-performance poly-Si thin film transistors crystallized by excimer laser irradiation with a-Si spacer structure
作者: Chang, TK
Lin, CW
Tsai, CC
Lu, JH
Chen, BT
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: In this work, high-performance polycrystalline Si thin film transistors have been fabricated by excimer laser crystallization of an amorphous Si film deposited on an array of amorphous Si spacers. The amorphous Si spacers served as seeds for lateral growth during excimer laser irradiation. Large longitudinal grains could be found in the device channel regions. In consequence, the thin-film transistors fabricated with Si spacer structure exhibited a high field-effect mobility of 288 cm(2)/V-s while the mobility of the conventional counterpart was 129 cm(2)/V-s. In addition, the uniformity of the device performance was improved as lateral growth could be artificially controlled. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25474
http://dx.doi.org/10.1149/1.1830372
ISSN: 1099-0062
DOI: 10.1149/1.1830372
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 1
起始頁: G14
結束頁: G16
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