標題: Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method
作者: Chen, BH
Lo, PY
Wei, JH
Tsai, MJ
Hwang, CL
Chao, TS
Lin, HC
Huang, TY
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: Lateral-growth carbon nanotubes (CNTs) were fabricated in a pre-assigned area using an integrated circuit compatible method. In order to synthesize single wall carbon nanotubes (SWNT) for the fabrication of a field-effect transistor (FET), the cobalt-mix-tetraethoxysilane (TEOS) (CMT) solution is proposed. The CMT solution has the unique property of dispersing the cobalt (Co) catalyst well and uniformly embedding it in a predetermined location after the CMT solution has solidified. The lateral growth of bundle-SWNT could be formed in atmospheric chemical vapor deposition (APCVD) with ethanol. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25478
http://dx.doi.org/10.1149/1.2035696
ISSN: 1099-0062
DOI: 10.1149/1.2035696
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 8
Issue: 10
起始頁: G290
結束頁: G293
顯示於類別:期刊論文