Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures

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DC 欄位	值	語言
dc.contributor.author	Liu, PC	en_US
dc.contributor.author	Wu, YCS	en_US
dc.date.accessioned	2014-12-08T15:37:06Z	-
dc.date.available	2014-12-08T15:37:06Z	-
dc.date.issued	2005	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25479	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.1843732	en_US
dc.description.abstract	The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures. (C) 2004 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.1843732	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	8	en_US
dc.citation.issue	2	en_US
dc.citation.spage	G31	en_US
dc.citation.epage	G34	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000226293900030	-
dc.citation.woscount	0	-
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