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dc.contributor.authorLiu, PCen_US
dc.contributor.authorWu, YCSen_US
dc.date.accessioned2014-12-08T15:37:06Z-
dc.date.available2014-12-08T15:37:06Z-
dc.date.issued2005en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/25479-
dc.identifier.urihttp://dx.doi.org/10.1149/1.1843732en_US
dc.description.abstractThe heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures. (C) 2004 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleBonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1843732en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume8en_US
dc.citation.issue2en_US
dc.citation.spageG31en_US
dc.citation.epageG34en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000226293900030-
dc.citation.woscount0-
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