標題: | Numerical simulation of self-heating InGaP/GaAs heterojunction bipolar transistors |
作者: | Li, YM Huang, KY 電子工程學系及電子研究所 友訊交大聯合研發中心 Department of Electronics Engineering and Institute of Electronics D Link NCTU Joint Res Ctr |
公開日期: | 2005 |
摘要: | We numerically simulate effects of the self-heating on the current-voltage characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs). A set of coupled nonlinear ordinary differential equations (ODEs) of the equivalent circuit of HBT is formed and solved numerically in the large-signal time domain. We decouple the corresponding ODEs using the waveform relaxation method and solve them with the monotone iterative method. The temperature-dependent energy band gap, the current gain, the saturation current, and the thermal conductivity are considered in the model formulation. The power-added efficiency and the 1-dB compression point of a three-finger HBT are calculated. This approach successfully explores the self-heating and the thermal coupling phenomena of the three-finger transistors under high power and high frequency conditions. The numerical algorithm reported here can be incorporated into electronic computer-aided design software to simulate ultra-large scale integrated and radio frequency circuits. |
URI: | http://hdl.handle.net/11536/25517 |
ISBN: | 3-540-26044-7 |
ISSN: | 0302-9743 |
期刊: | COMPUTATIONAL SCIENCE - ICCS 2005, PT 3 |
Volume: | 3516 |
起始頁: | 292 |
結束頁: | 299 |
Appears in Collections: | Conferences Paper |