標題: | 2D Numerical Simulation for InGaP/GaAs HBT Safe Operating Area |
作者: | Lin, Bo-Rong Tao, Nick G. M. Lee, Chien-Ping Henderson, Tim Lin, Barry J. F. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | HBT;safe operating area;TCAD;simulation |
公開日期: | 1-一月-2014 |
摘要: | The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different dominant mechanisms, which is in good agreement with analytical modeling and experimental results. The simulation not only gives us insight to the detailed failure mechanisms but also provides guidance for the design of devices with better ruggedness and improved SOA performances. |
URI: | http://hdl.handle.net/11536/128584 |
ISBN: | 978-2-87487-036-1 |
ISSN: | |
期刊: | 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) |
顯示於類別: | 會議論文 |