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dc.contributor.authorPerng, THen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorChen, CWen_US
dc.contributor.authorLehnen, Pen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:37:09Z-
dc.date.available2014-12-08T15:37:09Z-
dc.date.issued2004-12-22en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2004.08.148en_US
dc.identifier.urihttp://hdl.handle.net/11536/25540-
dc.description.abstractMetal-insulator-metal (MIM) capacitors with high-k HfO(2) dielectrics were fabricated and investigated. Experimental results show low leakage current densities of similar to5 x 10(-9) A/cm(2) and high capacitance density of similar to3.4 fF/mum(2) at 100 kHz in the MIM capacitors. The temperature coefficient and frequency dispersion effect for these MIM capacitors were very small. Different metal electrodes like tantalum, aluminum and copper were also investigated and compared. Finally, the mechanism of electrical transport was extracted for the HfO(2) MIM capacitors to be Poole-Frenkel-type conduction mechanism. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMIM capacitorsen_US
dc.subjectHfO(2)en_US
dc.subjectdielectricsen_US
dc.titleHigh-density MIM capacitors with HfO(2) dielectricsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2004.08.148en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume469en_US
dc.citation.issueen_US
dc.citation.spage345en_US
dc.citation.epage349en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000225724300058-
Appears in Collections:Conferences Paper


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