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dc.contributor.authorCHIOU, JCen_US
dc.contributor.authorCHEN, YJen_US
dc.contributor.authorCHEN, MCen_US
dc.date.accessioned2014-12-08T15:04:03Z-
dc.date.available2014-12-08T15:04:03Z-
dc.date.issued1994-04-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/BF02671218en_US
dc.identifier.urihttp://hdl.handle.net/11536/2556-
dc.description.abstractCopper chemical vapor deposition using Cu-hexafluoroacetylacetonate (hfac) trimethylvinylsilane (TMVS) as precursor was performed in a cold-wall low pressure chemical vapor deposition (CVD) reactor. The design and operation of the reactor are described. Copper deposition on thermal SiO2, W, and CoSi2 substrate surfaces was investigated over the temperature range of 160-300-degrees-C and pressure range of 10-1000 mTorr. The activation energies of Cu CVD were determined to be 13.33 and 11.54 kcal/mole for the W and CoSi2 substrates, respectively. The dependence of film resistivity, grain size, and growth rate on deposition pressure and temperature were also investigated. The film uniformity was found to be better than ten percent over a 4-inch diameter substrate. Experimental results also show that selective deposition can be achieved at a pressure of 10 mTorr within the temperature range of 160-200-degrees-C. In addition, hydrofluoric acid dipping was found to modify the SiO2 surface and influence the copper deposition on it.en_US
dc.language.isoen_USen_US
dc.subjectCOPPER CHEMICAL VAPOR DEPOSITION SELECTIVE DEPOSITIONen_US
dc.subjectDEPOSITION MECHANISMen_US
dc.subjectDEPOSITION PARAMETERSen_US
dc.subjectMETALLIZATIONen_US
dc.titleCOPPER CHEMICAL-VAPOR-DEPOSITION FROM CU(HEXAFLUOROACETYLACETONATE)TRIMETHYLVINYLSILANEen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/BF02671218en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume23en_US
dc.citation.issue4en_US
dc.citation.spage383en_US
dc.citation.epage390en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NE36500004-
dc.citation.woscount19-
Appears in Collections:Articles