標題: PD-GE CONTACT TO N-GAAS WITH THE TIW DIFFUSION BARRIER
作者: HUANG, WC
LEI, TF
LEE, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: GAAS;OHMIC CONTACTS;RAPID THERMAL ANNEALING (RTA)
公開日期: 1-Apr-1994
摘要: Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n=GaAs contact system. A value of 1.45 x 10(-6) OMEGA-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425-degrees-C for 90 s. It can withstand a thermal aging at 350-degrees-C for 40 h with its pc increasing to 2.94 x 10(-6) OMEGA-CM2 and for an aging at 410-degrees-C for 40 h with its p. increasing to 1.38 x 10(-5) OMEGA-cm2.
URI: http://dx.doi.org/10.1007/BF02671220
http://hdl.handle.net/11536/2557
ISSN: 0361-5235
DOI: 10.1007/BF02671220
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 23
Issue: 4
起始頁: 397
結束頁: 401
Appears in Collections:Articles