Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liang, MW | en_US |
dc.contributor.author | Hsieh, TE | en_US |
dc.contributor.author | Chen, CC | en_US |
dc.contributor.author | Hung, YT | en_US |
dc.date.accessioned | 2014-12-08T15:37:14Z | - |
dc.date.available | 2014-12-08T15:37:14Z | - |
dc.date.issued | 2004-12-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.43.8258 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25581 | - |
dc.description.abstract | In this work, we studied the application of electroless copper/nickel (Cu/Ni) films deposited on aluminum nitride (AlN) substrates to high-frequency power GaAs device packaging. Experimental results showed metal films deposited on polished AlN surfaces possess a flatter surface, a finer grain structure, and a lower resistivity than those on unpolished surfaces. On unpolished AlN substrates, rough-surface-induced voids appear in the film interface during grain clustering, therefore deteriorating the electrical conductivity of the deposited layers. Pull-off tests revealed that the Cu/Ni films strongly adhered on both types of AlN substrates and that the adhesion strength exceeded 761 kg/cm(2). The Ni film remained a mixture of amorphous and microcrystalline structures, and the Cu film was polycrystalline. The resistivity of the Cu/Ni film was decreased by annealing process, which in turn decreased the number of crystal defects in the films. Subsequent Pb-Sn solder bumping experiments indicated the amorphous Ni(P) film was a good diffusion barrier layer since Sn could not diffuse through it. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | electroless copper/nickel | en_US |
dc.subject | aluminum nitride | en_US |
dc.subject | surface roughness | en_US |
dc.subject | diffusion barrier | en_US |
dc.subject | flip chip | en_US |
dc.title | Electroless copper/nickel films deposited on AIN substrates | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.43.8258 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 43 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 8258 | en_US |
dc.citation.epage | 8266 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000226035000069 | - |
dc.citation.woscount | 7 | - |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.