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dc.contributor.authorWang, TCen_US
dc.contributor.authorLee, JYen_US
dc.contributor.authorHsieh, CCen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:37:14Z-
dc.date.available2014-12-08T15:37:14Z-
dc.date.issued2004-12-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/25585-
dc.description.abstractA series of investigations on the interrupted deposition of laser ablation strontium titanate epitaxy growth were conducted. RHEED intensity recovery curves at various temperatures show a near-quadratic power law dependence on annealing time. Combined with the evidence showing the intimate correlation between the step edge density and the RHEED intensity, a diffusion Arrhenius plot with the activation energy of 1.0 eV was obtained for the kinetics of step edge migration.en_US
dc.language.isoen_USen_US
dc.titleRHEED in-situ monitored step edge diffusion during interrupted laser ablation epitaxy growth of SrTiO3en_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume42en_US
dc.citation.issue6en_US
dc.citation.spage710en_US
dc.citation.epage716en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000225781900005-
dc.citation.woscount0-
Appears in Collections:Articles


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