完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, TC | en_US |
dc.contributor.author | Lee, JY | en_US |
dc.contributor.author | Hsieh, CC | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:37:14Z | - |
dc.date.available | 2014-12-08T15:37:14Z | - |
dc.date.issued | 2004-12-01 | en_US |
dc.identifier.issn | 0577-9073 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25585 | - |
dc.description.abstract | A series of investigations on the interrupted deposition of laser ablation strontium titanate epitaxy growth were conducted. RHEED intensity recovery curves at various temperatures show a near-quadratic power law dependence on annealing time. Combined with the evidence showing the intimate correlation between the step edge density and the RHEED intensity, a diffusion Arrhenius plot with the activation energy of 1.0 eV was obtained for the kinetics of step edge migration. | en_US |
dc.language.iso | en_US | en_US |
dc.title | RHEED in-situ monitored step edge diffusion during interrupted laser ablation epitaxy growth of SrTiO3 | en_US |
dc.type | Article | en_US |
dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
dc.citation.volume | 42 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 710 | en_US |
dc.citation.epage | 716 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000225781900005 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |