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dc.contributor.authorShao, TLen_US
dc.contributor.authorChen, TSen_US
dc.contributor.authorHuang, YMen_US
dc.contributor.authorChen, Cen_US
dc.date.accessioned2014-12-08T15:37:15Z-
dc.date.available2014-12-08T15:37:15Z-
dc.date.issued2004-12-01en_US
dc.identifier.issn0884-2914en_US
dc.identifier.urihttp://dx.doi.org/10.1557/JMR.2004.0478en_US
dc.identifier.urihttp://hdl.handle.net/11536/25597-
dc.description.abstractWhile the dimension of solder bumps keeps shrinking to meet higher performance requirements, the formation of interfacial compounds may be affected more profoundly by the other side of metallization layer due to a smaller bump height. In this study, cross interactions on the formation of intermetallic compounds (IMCs) were investigated in eutectic SnPb, SnAg3.5, SnAg3.8Cu0.7, and SnSb5 solders jointed to Cu/Cr-Cu/Ti on the chip side and Au/Ni metallization on the substrate side. It is found that the Cu atoms on the chip side diffused to the substrate side to form (Cu-x,Ni1-x)(6)Sn-5 or (Ni-y,Cu1-y)(3)Sn-4 for the four solders during the reflow for joining flip chip packages. For the SnPb solder, Au atoms were observed on the chip side after the reflow, yet few Ni atoms were detected on the chip side. In addition, for SnAg3.5 and SnSn5 solders, the Ni atoms on the substrate side migrated to the chip side during the reflow to change binary Cu6Sn5 into ternary (Cu-x,Ni1-x)(6)Sn-5 IMCs, in which the Ni weighed approximately 21%. Furthermore, it is intriguing that no Ni atoms were detected on the chip side of the SnAg3.8Cu0.7 joint. The possible driving forces responsible for the diffusion of Au, Ni, and Cu atoms are discussed in this paper.en_US
dc.language.isoen_USen_US
dc.titleCross interactions on interfacial compound formation of solder bumps and metallization layers during reflowen_US
dc.typeArticleen_US
dc.identifier.doi10.1557/JMR.2004.0478en_US
dc.identifier.journalJOURNAL OF MATERIALS RESEARCHen_US
dc.citation.volume19en_US
dc.citation.issue12en_US
dc.citation.spage3654en_US
dc.citation.epage3664en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000225559900028-
dc.citation.woscount19-
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