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dc.contributor.authorYeh, CHen_US
dc.contributor.authorLee, CCen_US
dc.contributor.authorChi, Sen_US
dc.date.accessioned2014-12-08T15:37:18Z-
dc.date.available2014-12-08T15:37:18Z-
dc.date.issued2004-11-16en_US
dc.identifier.issn0030-4018en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.optcom.2004.07.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/25634-
dc.description.abstractA new S- plus C-band erbium-doped fiber amplifier (EDFA) module with coupled structure over 96 nm gain bandwidth of 1480-1576 nm has been experimentally investigated and demonstrated. For this proposed configuration, 30 and 36.2 dB peak gains are observed at 1506 and 1532 nm, respectively, when the input signal power is -25 dBm. In addition, this proposed amplifier module also can provide a broadband amplified spontaneous emission (ASE) light source from 1480 to 1572 nm. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectEDFAen_US
dc.subjectwidebanden_US
dc.subjectcoupled structureen_US
dc.subjectWDM systemsen_US
dc.subjectS-banden_US
dc.titleS- plus C-band erbium-doped fiber amplifier in parallel structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.optcom.2004.07.018en_US
dc.identifier.journalOPTICS COMMUNICATIONSen_US
dc.citation.volume241en_US
dc.citation.issue4-6en_US
dc.citation.spage443en_US
dc.citation.epage447en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000224935200026-
dc.citation.woscount8-
Appears in Collections:Articles


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