S- plus C-band erbium-doped fiber amplifier in parallel structure

doi:10.1016/j.optcom.2004.07.018

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, CH	en_US
dc.contributor.author	Lee, CC	en_US
dc.contributor.author	Chi, S	en_US
dc.date.accessioned	2014-12-08T15:37:18Z	-
dc.date.available	2014-12-08T15:37:18Z	-
dc.date.issued	2004-11-16	en_US
dc.identifier.issn	0030-4018	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.optcom.2004.07.018	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25634	-
dc.description.abstract	A new S- plus C-band erbium-doped fiber amplifier (EDFA) module with coupled structure over 96 nm gain bandwidth of 1480-1576 nm has been experimentally investigated and demonstrated. For this proposed configuration, 30 and 36.2 dB peak gains are observed at 1506 and 1532 nm, respectively, when the input signal power is -25 dBm. In addition, this proposed amplifier module also can provide a broadband amplified spontaneous emission (ASE) light source from 1480 to 1572 nm. (C) 2004 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	EDFA	en_US
dc.subject	wideband	en_US
dc.subject	coupled structure	en_US
dc.subject	WDM systems	en_US
dc.subject	S-band	en_US
dc.title	S- plus C-band erbium-doped fiber amplifier in parallel structure	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.optcom.2004.07.018	en_US
dc.identifier.journal	OPTICS COMMUNICATIONS	en_US
dc.citation.volume	241	en_US
dc.citation.issue	4-6	en_US
dc.citation.spage	443	en_US
dc.citation.epage	447	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000224935200026	-
dc.citation.woscount	8	-
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