| 標題: | Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films |
| 作者: | Li, ZQ Lin, JJ 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
| 公開日期: | 15-十一月-2004 |
| 摘要: | We have systematically measured the electrical resistivities and thermopowers of transparent tin-doped indium oxide films. We found that the resistivities obey the Bloch-Gruneisen law between 25 and 300 K, whereas below 25 K, the resistivities slightly increase logarithmically with the decreasing temperature due to the weak-localization and electron-electron interaction effects. The thermopowers are negative and decrease linearly with temperature from 300 K down to 1.8 K. Our results strongly indicate that the tin-doped indium oxide films behave as a good, free-electron-like conductor while being transparent. (C) 2004 American Institute of Physics. |
| URI: | http://dx.doi.org/10.1063/1.1801153 http://hdl.handle.net/11536/25635 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.1801153 |
| 期刊: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 96 |
| Issue: | 10 |
| 起始頁: | 5918 |
| 結束頁: | 5920 |
| 顯示於類別: | 期刊論文 |

