標題: | Electrical resistivities and thermopowers of transparent Sn-doped indium oxide films |
作者: | Li, ZQ Lin, JJ 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
公開日期: | 15-十一月-2004 |
摘要: | We have systematically measured the electrical resistivities and thermopowers of transparent tin-doped indium oxide films. We found that the resistivities obey the Bloch-Gruneisen law between 25 and 300 K, whereas below 25 K, the resistivities slightly increase logarithmically with the decreasing temperature due to the weak-localization and electron-electron interaction effects. The thermopowers are negative and decrease linearly with temperature from 300 K down to 1.8 K. Our results strongly indicate that the tin-doped indium oxide films behave as a good, free-electron-like conductor while being transparent. (C) 2004 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1801153 http://hdl.handle.net/11536/25635 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.1801153 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 96 |
Issue: | 10 |
起始頁: | 5918 |
結束頁: | 5920 |
顯示於類別: | 期刊論文 |