Electrical transport in transparent conducting tin-doped indium oxide films

Abstract

We have studied the temperature behavior of the electrical resistivities rho(T) in a series of tin-doped indium-oxide films with different residual resistivities rho(0) varying from 218 to 568 mu Omega cm. We found that the temperature dependence of p can be well described by the Bloch-Gruneisen law from 300 K down to about 100 K. In particular, we observed that the strength of the electron-phonon coupling, beta(BG), (which characterizes a prefactor in the Bloch-Gruneisen formula) increases linearly with increasing rho(0). This result is not understood in terms of current theoretical concept for electron-phonon interaction in metals.