標題: Electrical transport in transparent conducting tin-doped indium oxide films
作者: Yeh, S. S.
Lu, J. Y.
Shiu, M. W.
Lin, J. J.
物理研究所
Institute of Physics
關鍵字: electrical transport;Bloch-Gruneisen law;disorder
公開日期: 2006
摘要: We have studied the temperature behavior of the electrical resistivities rho(T) in a series of tin-doped indium-oxide films with different residual resistivities rho(0) varying from 218 to 568 mu Omega cm. We found that the temperature dependence of p can be well described by the Bloch-Gruneisen law from 300 K down to about 100 K. In particular, we observed that the strength of the electron-phonon coupling, beta(BG), (which characterizes a prefactor in the Bloch-Gruneisen formula) increases linearly with increasing rho(0). This result is not understood in terms of current theoretical concept for electron-phonon interaction in metals.
URI: http://hdl.handle.net/11536/17135
ISBN: 0-7354-0347-3
ISSN: 0094-243X
期刊: Low Temperature Physics, Pts A and B
Volume: 850
起始頁: 1548
結束頁: 1549
顯示於類別:會議論文