標題: | Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K |
作者: | Chiu, Shao-Pin Chung, Hui-Fang Lin, Yong-Han Kai, Ji-Jung Chen, Fu-Rong Lin, Juhn-Jong 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
公開日期: | 11-三月-2009 |
摘要: | Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few mu m long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Gruneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs. |
URI: | http://dx.doi.org/10.1088/0957-4484/20/10/105203 http://hdl.handle.net/11536/7492 |
ISSN: | 0957-4484 |
DOI: | 10.1088/0957-4484/20/10/105203 |
期刊: | NANOTECHNOLOGY |
Volume: | 20 |
Issue: | 10 |
結束頁: | |
顯示於類別: | 期刊論文 |