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dc.contributor.authorChiu, Shao-Pinen_US
dc.contributor.authorChung, Hui-Fangen_US
dc.contributor.authorLin, Yong-Hanen_US
dc.contributor.authorKai, Ji-Jungen_US
dc.contributor.authorChen, Fu-Rongen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-08T15:09:46Z-
dc.date.available2014-12-08T15:09:46Z-
dc.date.issued2009-03-11en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/10/105203en_US
dc.identifier.urihttp://hdl.handle.net/11536/7492-
dc.description.abstractSingle-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few mu m long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Gruneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.en_US
dc.language.isoen_USen_US
dc.titleFour-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 Ken_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/20/10/105203en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume20en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000263493800006-
dc.citation.woscount22-
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