标题: Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films
作者: Lin, CC
Chen, SY
Cheng, SY
材料科学与工程学系
Department of Materials Science and Engineering
关键字: ZnO;phosphorus implantation;photoluminescence;defect chemistry
公开日期: 15-十一月-2004
摘要: ZnO films were implanted with phosphorus in the range from 5 x 10(12) to 5 x 10(15) cm(-2). Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5 x 10(18) ions/cm(3)), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5 x 10(18) ions/cm(3)), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2004.05.255
http://hdl.handle.net/11536/25641
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2004.05.255
期刊: APPLIED SURFACE SCIENCE
Volume: 238
Issue: 1-4
起始页: 405
结束页: 409
显示于类别:Conferences Paper


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