1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorLing, Shih-Chunen_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:37:19Z-
dc.date.available2014-12-08T15:37:19Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-55752-890-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/25654-
dc.description.abstractWe have demonstrated nanorod lateral overgrowth to reduce dislocation density in a-plane GaN. Subsequently, we grow green a-plane light-emitting diodes using nanorod lateral overgrowth. Output power of 0.5 mW was measured at 20 mA. (C)2010 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleCharacterization of a-plane green light-emitting diodes using nanorod lateral overgrowthen_US
dc.typeArticleen_US
dc.identifier.journal2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000290513602290-
Appears in Collections:Conferences Paper


Related Contents
Loading...