Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ling, Shih-Chun	en_US
dc.contributor.author	Chang, Shih-Pang	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:37:19Z	-
dc.date.available	2014-12-08T15:37:19Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-55752-890-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25654	-
dc.description.abstract	We have demonstrated nanorod lateral overgrowth to reduce dislocation density in a-plane GaN. Subsequently, we grow green a-plane light-emitting diodes using nanorod lateral overgrowth. Output power of 0.5 mW was measured at 20 mA. (C)2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Characterization of a-plane green light-emitting diodes using nanorod lateral overgrowth	en_US
dc.type	Article	en_US
dc.identifier.journal	2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000290513602290	-
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