完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, SY | en_US |
dc.contributor.author | Lin, P | en_US |
dc.contributor.author | Lee, CY | en_US |
dc.contributor.author | Ho, MS | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.date.accessioned | 2014-12-08T15:37:21Z | - |
dc.date.available | 2014-12-08T15:37:21Z | - |
dc.date.issued | 2004-11-01 | en_US |
dc.identifier.issn | 1533-4880 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1166/jnn.2004.135 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25688 | - |
dc.description.abstract | Vertical ZnO nanowires were successfully grown on epitaxial ZnO (002) buffer layer/Si (100) substrate. The nanowire growth process was controlled by surface morphology and orientation of the epitaxial ZnO buffer layer, which was deposited by radio-frequency (rf) sputtering. The copper catalyzed the vapor-liquid-solid growth of ZnO nanowires with diameter of similar to30 nm and length of similar to5.0 mum. The perfect wurtzite epitaxial structure (HCP structure) of the ZnO (0002) nanowires synthesized on ZnO (002) buffer layer/Si (100) substrate results in excellent optical characteristics such as strong UV emission at 380 nm with potential use in nano-optical and nano-electronic devices. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | nanowires | en_US |
dc.subject | ZnO | en_US |
dc.subject | vapor-liquid-solid growth | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | transmission electron microscopy | en_US |
dc.subject | photoluminescence | en_US |
dc.title | Fabrication of vertical ZnO nanowires on silicon(100) with epitaxial ZnO buffer layer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1166/jnn.2004.135 | en_US |
dc.identifier.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 968 | en_US |
dc.citation.epage | 971 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000225872000004 | - |
dc.citation.woscount | 25 | - |
顯示於類別: | 期刊論文 |