ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION

doi:10.1109/55.285410

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, SL	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	CHEN, CF	en_US
dc.contributor.author	CHEN, LJ	en_US
dc.contributor.author	HO, KZ	en_US
dc.contributor.author	LING, YC	en_US
dc.date.accessioned	2014-12-08T15:04:04Z	-
dc.date.available	2014-12-08T15:04:04Z	-
dc.date.issued	1994-04-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.285410	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2570	-
dc.description.abstract	In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900-degrees-C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device.	en_US
dc.language.iso	en_US	en_US
dc.title	ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.285410	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	15	en_US
dc.citation.issue	4	en_US
dc.citation.spage	120	en_US
dc.citation.epage	122	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994NK10700002	-
dc.citation.woscount	11	-
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