Terahertz Emission of Magnesium doped Indium Nitride

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, Y. -J.	en_US
dc.contributor.author	Ahn, H.	en_US
dc.contributor.author	Hong, Y. -L.	en_US
dc.contributor.author	Gwo, Shangjr	en_US
dc.date.accessioned	2014-12-08T15:37:24Z	-
dc.date.available	2014-12-08T15:37:24Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-55752-890-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25720	-
dc.description.abstract	Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg. (C)2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Terahertz Emission of Magnesium doped Indium Nitride	en_US
dc.type	Article	en_US
dc.identifier.journal	2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000290513600246	-
顯示於類別：	會議論文