Terahertz Emission of Magnesium doped Indium Nitride

標題:	Terahertz Emission of Magnesium doped Indium Nitride
作者:	Yeh, Y. -J. Ahn, H. Hong, Y. -L. Gwo, Shangjr 光電工程學系 Department of Photonics
公開日期:	2010
摘要:	Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg. (C)2010 Optical Society of America
URI:	http://hdl.handle.net/11536/25720
ISBN:	978-1-55752-890-2
期刊:	2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)
Appears in Collections:	Conferences Paper