The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode

Abstract

The characteristics of charge trapping during constant voltage stress in an n-type metal-oxide-semiconductor capacitor with HfO2/SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the high-k gate stack is hole trapping rather than electron trapping. This behavior can be well described by the distributed capture cross-section model. In particular, the flatband voltage shift (DeltaV(fb)) is mainly caused by the trap filling instead of the trap creation [Zafar , J. Appl. Phys. 93, 9298 (2003)]. The dominant hole trapping can be ascribed to a higher probability for hole tunneling from the substrate, compared to electron tunneling from the gate, due to a shorter tunneling path over the barrier for holes due to the work function of the TiN gate electrode. (C) 2004 American Institute of Physics.