Investigation of GaN LED with Be-implanted Mg-doped GaN layer

doi:10.1016/j.mseb.2004.05.024

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DC 欄位	值	語言
dc.contributor.author	Huang, HW	en_US
dc.contributor.author	Kao, CC	en_US
dc.contributor.author	Chu, JT	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Wang, SC	en_US
dc.contributor.author	Yu, CC	en_US
dc.contributor.author	Lin, CF	en_US
dc.date.accessioned	2014-12-08T15:37:27Z	-
dc.date.available	2014-12-08T15:37:27Z	-
dc.date.issued	2004-10-15	en_US
dc.identifier.issn	0921-5107	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.mseb.2004.05.024	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25760	-
dc.description.abstract	We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10(18)CM(-3) and low specific contact resistance value of 2.0 x 10(-4) Omegacm(2) than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process. (C) 2004 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Gallium nitride (GaN)	en_US
dc.subject	light emitting diode (LED)	en_US
dc.title	Investigation of GaN LED with Be-implanted Mg-doped GaN layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.mseb.2004.05.024	en_US
dc.identifier.journal	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY	en_US
dc.citation.volume	113	en_US
dc.citation.issue	1	en_US
dc.citation.spage	19	en_US
dc.citation.epage	23	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000224050000004	-
dc.citation.woscount	4	-
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