Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy

doi:10.1088/0268-1242/26/2/022001

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Katkov, A. V.	en_US
dc.contributor.author	Chi, Jim	en_US
dc.contributor.author	Wang, C. C.	en_US
dc.contributor.author	Cheng, C.	en_US
dc.date.accessioned	2014-12-08T15:37:36Z	-
dc.date.available	2014-12-08T15:37:36Z	-
dc.date.issued	2011-02-01	en_US
dc.identifier.issn	0268-1242	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0268-1242/26/2/022001	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25852	-
dc.description.abstract	Strong enhancement of photoluminescence (PL) efficiency has been observed in a GaAs/InAs quantum dots-in-a-well structure, grown with in situ irradiation of atomic hydrogen supplied by a radio-frequency hydrogen plasma source. The PL enhancement and wavelength position at room temperature have been found to be stable under extensive thermal annealing up to 630 degrees C in vacuum. As shown by the corresponding improvement of the barrier material, the possible mechanism for PL enhancement is the reduced nonradiative recombination in the barrier region by in situ passivation of defects while they are generated.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0268-1242/26/2/022001	en_US
dc.identifier.journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	en_US
dc.citation.volume	26	en_US
dc.citation.issue	2	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000285621400001	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文

文件中的檔案：

000285621400001.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。