標題: | Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence |
作者: | Hsu, Chiung-Chih Hsu, Ray-Quen Wu, Yue-Han Chi, Tung-Wei Chiang, Chen-Hao Chen, Jenn-Fang Chang, Mao-Nan 機械工程學系 材料科學與工程學系 電子物理學系 Department of Mechanical Engineering Department of Materials Science and Engineering Department of Electrophysics |
關鍵字: | Quantum dots;TEM;PL;Molecular beam epitaxy |
公開日期: | 1-十月-2008 |
摘要: | Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties. (C) 2008 Published by Elsevier B.V. |
URI: | http://dx.doi.org/10.1016/j.ultramic.2008.04.098 http://hdl.handle.net/11536/28831 |
ISSN: | 0304-3991 |
DOI: | 10.1016/j.ultramic.2008.04.098 |
期刊: | ULTRAMICROSCOPY |
Volume: | 108 |
Issue: | 11 |
起始頁: | 1495 |
結束頁: | 1499 |
顯示於類別: | 會議論文 |