Nitrogenated amorphous InGaZnO thin film transistor

doi:10.1063/1.3551537

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chou, Yi-Teh	en_US
dc.contributor.author	Teng, Li-Feng	en_US
dc.contributor.author	Li, Fu-Hai	en_US
dc.contributor.author	Shieh, Han-Ping	en_US
dc.date.accessioned	2014-12-08T15:37:36Z	-
dc.date.available	2014-12-08T15:37:36Z	-
dc.date.issued	2011-01-31	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3551537	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25860	-
dc.description.abstract	This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO: N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO: N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3551537]	en_US
dc.language.iso	en_US	en_US
dc.title	Nitrogenated amorphous InGaZnO thin film transistor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.3551537	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	98	en_US
dc.citation.issue	5	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000286988400030	-
dc.citation.woscount	20	-
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