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dc.contributor.authorDo, Hienen_US
dc.contributor.authorYen, Tzu-Chunen_US
dc.contributor.authorTian, Chih-Shengen_US
dc.contributor.authorWu, Yue-Hanen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:37:38Z-
dc.date.available2014-12-08T15:37:38Z-
dc.date.issued2011-01-15en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2010.10.105en_US
dc.identifier.urihttp://hdl.handle.net/11536/25883-
dc.description.abstractEpitaxial TiC(x)O(y) thin films were grown on MgO (0 0 1) substrates by using pulsed laser deposition method. High-resolution X-ray diffraction and transmission electron microscopy were used to examine crystallinity and microstructure of epitaxial TiC(x)O(y) film on MgO. The chemical composition of the film is determined to be x similar to 0.47 and y similar to 0.69 by X-ray photoelectron spectroscopy. Atomic force microscopy revealed that the surface of TiC(x)O(y) film is very smooth with roughness of 0.18 nm. The resistivity of the TiC(x)O(y) film measured by four-point-probe method was about 137 mu Omega cm. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTitanium oxycarbideen_US
dc.subjectEpitaxial growthen_US
dc.subjectPulsed laser depositionen_US
dc.titleEpitaxial growth of titanium oxycarbide on MgO (001) substrates by pulsed laser depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.apsusc.2010.10.105en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume257en_US
dc.citation.issue7en_US
dc.citation.spage2990en_US
dc.citation.epage2994en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000285963200095-
dc.citation.woscount3-
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