標題: | Improving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory Applications |
作者: | Syu, Yong-En Chang, Ting-Chang Tsai, Chih-Tsung Chang, Geng-Wei Tsai, Tsung-Ming Chang, Kuan-Chang Tai, Ya-Hsiang Tsai, Ming-Jinn Sze, Simon M. 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 1-一月-2011 |
摘要: | The switching layer with SiGeO(x)/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeO(x)/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (similar to 5 nm) is introduced at SiGeO(x)/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeO(x)/TiN memory cells, the proposed Pt/SiGeO(x)/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615823] All rights reserved. |
URI: | http://dx.doi.org/10.1149/1.3615823 http://hdl.handle.net/11536/25908 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.3615823 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 14 |
Issue: | 10 |
起始頁: | H419 |
結束頁: | H421 |
顯示於類別: | 期刊論文 |