標題: Improving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory Applications
作者: Syu, Yong-En
Chang, Ting-Chang
Tsai, Chih-Tsung
Chang, Geng-Wei
Tsai, Tsung-Ming
Chang, Kuan-Chang
Tai, Ya-Hsiang
Tsai, Ming-Jinn
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-一月-2011
摘要: The switching layer with SiGeO(x)/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeO(x)/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (similar to 5 nm) is introduced at SiGeO(x)/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeO(x)/TiN memory cells, the proposed Pt/SiGeO(x)/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615823] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3615823
http://hdl.handle.net/11536/25908
ISSN: 1099-0062
DOI: 10.1149/1.3615823
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 10
起始頁: H419
結束頁: H421
顯示於類別:期刊論文