完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsiao, Jui-Chungen_US
dc.contributor.authorChen, Chien-Hsunen_US
dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorWu, Der-Chingen_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2014-12-08T15:37:44Z-
dc.date.available2014-12-08T15:37:44Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/25945-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3607981en_US
dc.description.abstractIn this work, effects of a hydrogen dilution ratio on the intrinsic amorphous hydrogenated silicon (i-a-Si:H) film of heterojunction silicon-based (HJS) solar cells were systematically studied. Long lifetime samples were obtained for R <= 5, indicating a good a-Si:H/c-Si interface. The dark conductivity was drastically decreased for R >= 2, indicating a good film quality. Consequently, an optimized power conversion efficiency of the HJS solar cells was obtained at a moderate R between 2 and 5. In contrast to the previous emphasis on long lifetime, the results indicate that both the interface and film qualities are correlated to the hydrogen dilution, which are important to achieve high-efficiency HJS solar cells. We show that the most optimized HJS solar cell exhibits a marked efficiency of 17.27%. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3607981] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffect of Hydrogen Dilution on the Intrinsic a-Si:H Film of the Heterojunction Silicon-Based Solar Cellen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3607981en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue9en_US
dc.citation.spageH876en_US
dc.citation.epageH878en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000293175600056-
dc.citation.woscount8-
顯示於類別:期刊論文


文件中的檔案:

  1. 000293175600056.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。