標題: | A delta-doped quantum well system with additional modulation doping |
作者: | Luo, Dong-Sheng Lin, Li-Hung Su, Yi-Chun Wang, Yi-Ting Peng, Zai Fong Lo, Shun-Tsung Chen, Kuang Yao Chang, Yuan Huei Wu, Jau-Yang Lin, Yiping Lin, Sheng-Di Chen, Jeng-Chung Huang, Chun Feng Liang, Chi-Te 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2011 |
摘要: | A delta-doped quantum well with additional modulation doping may have potential applications. Utilizing such a hybrid system, it is possible to experimentally realize an extremely high two-dimensional electron gas (2DEG) density without suffering inter-electronic-subband scattering. In this article, the authors report on transport measurements on a delta-doped quantum well system with extra modulation doping. We have observed a 0-10 direct insulator-quantum Hall (I-QH) transition where the numbers 0 and 10 correspond to the insulator and Landau level filling factor nu = 10 QH state, respectively. In situ titled-magnetic field measurements reveal that the observed direct I-QH transition depends on the magnetic component perpendicular to the quantum well, and the electron system within this structure is 2D in nature. Furthermore, transport measurements on the 2DEG of this study show that carrier density, resistance and mobility are approximately temperature (T)-independent over a wide range of T. Such results could be an advantage for applications in T-insensitive devices. |
URI: | http://hdl.handle.net/11536/25984 http://dx.doi.org/10.1186/1556-276X-6-139 |
ISSN: | 1931-7573 |
DOI: | 10.1186/1556-276X-6-139 |
期刊: | NANOSCALE RESEARCH LETTERS |
Volume: | 6 |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.