標題: Light-Enhanced Bias Stress Effect on Amorphous In-Ga-Zn-O Thin-film Transistor with Lights of Varying Colors
作者: Chen, Wei-Tsung
Hsueh, Hsiu-Wen
Zan, Hsiao-Wen
Tsai, Chuang-Chuang
光電工程學系
Department of Photonics
公開日期: 2011
摘要: This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color-and bias-polarity-dependent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3584088] All rights reserved.
URI: http://hdl.handle.net/11536/25992
http://dx.doi.org/10.1149/1.3584088
ISSN: 1099-0062
DOI: 10.1149/1.3584088
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 7
起始頁: H297
結束頁: H299
顯示於類別:期刊論文