標題: Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate
作者: Huang, C. C.
Chang, S. J.
Kuo, C. H.
Wu, C. H.
Ko, C. H.
Wann, Clement H.
Cheng, Y. C.
Lin, W. J.
照明與能源光電研究所
Institute of Lighting and Energy Photonics
公開日期: 2011
摘要: The authors report the growth of GaN epitaxial layers on nano-patterned Si(001) substrates prepared by the standard facilities used in integrated circuit (IC) industry. It was found that we could achieve high-quality single crystalline GaN by using the 50 nm SiO(2) recess patterned Si(001) substrate. It was also found that we can reduce the tensile stress in GaN epitaxial layer by about 95% using the nano-patterned Si(001) substrate, as compared to the conventional un-patterned Si(111) substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3569753] All rights reserved.
URI: http://hdl.handle.net/11536/26002
http://dx.doi.org/10.1149/1.3569753
ISSN: 0013-4651
DOI: 10.1149/1.3569753
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 6
起始頁: H626
結束頁: H629
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