標題: H(2)O-Assisted O(2) Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
作者: Chung, Wan-Fang
Chang, Ting-Chang
Li, Hung-Wei
Chen, Shih-Ching
Chen, Yu-Chun
Tseng, Tseung-Yuen
Tai, Ya-Hsiang
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 1-Jan-2011
摘要: This paper investigates the environmental effects and related adsorbent species reactions on sol-gel derived amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The discrepancy between device characteristics measured in atmospheric and vacuum conditions was clarified through experiments with thermal annealing and different gas partial pressures. The measurement of a-IGZO TFTs in simulated water vapor environment was also utilized. We verified that the adsorbed water originating from the surrounding atmosphere can cause an increase in off-current and also enhance more oxygen molecule adsorption on the exposed back-channel surface, leading to more serious degradation in on-current. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3568831] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3568831
http://hdl.handle.net/11536/26016
ISSN: 1099-0062
DOI: 10.1149/1.3568831
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 6
起始頁: H235
結束頁: H237
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