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dc.contributor.authorCHANG, KMen_US
dc.contributor.authorYEH, THen_US
dc.contributor.authorWANG, SWen_US
dc.contributor.authorLEE, CHen_US
dc.date.accessioned2014-12-08T15:04:06Z-
dc.date.available2014-12-08T15:04:06Z-
dc.date.issued1994-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.33.1285en_US
dc.identifier.urihttp://hdl.handle.net/11536/2601-
dc.description.abstractA new simple, general and rigorous analytic expression for the equilibrium activity coefficients of electrons and holes in degenerate semiconductors with nonuniform composition is presented. These activity coefficients are functions of the carrier degeneracy (Fermi-Dirac statistics), the band gap, the electron affinity and the density of states which vary with position. The calculation of carrier activity coefficients requires the selection of chemical potential and electrostatic potential references. The choice of these reference states is addressed. The relationships between purely thermodynamic quantities and parameters of the band theory are also presented. Emphasis is also placed on formulating an equation in a simple, Boltzmann-like form in which the nonideal behavior is described by two parameters, the effective band-gap shrinkage, DELTAE(g), and the effective asymmetry factor, A. In this form the working equations for the carrier densities and activity coefficients are convenient for use in computer-aided analysis and design. The approach presented here allows convenient treatment of nonuniform degenerate semiconductors in a manner that is consistent with thermodynamics as well as with the Poisson-Boltzmann equation for the electrostatic potential.en_US
dc.language.isoen_USen_US
dc.subjectACTIVITY COEFFICIENTen_US
dc.subjectREFERENCE STATEen_US
dc.subjectHEAVILY DOPED SEMICONDUCTORen_US
dc.subjectNONUNIFORM BAND STRUCTUREen_US
dc.subjectBAND-GAP NARROWINGen_US
dc.subjectINTRINSIC LEVELen_US
dc.titleACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN DEGENERATE SEMICONDUCTORS WITH NONUNIFORM COMPOSITIONen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.33.1285en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume33en_US
dc.citation.issue3Aen_US
dc.citation.spage1285en_US
dc.citation.epage1292en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NG40000012-
dc.citation.woscount0-
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