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dc.contributor.authorLee, Chia-Huaen_US
dc.contributor.authorChiu, Wei-Haoen_US
dc.contributor.authorLee, Kun-Muen_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.contributor.authorWu, Jenn-Mingen_US
dc.date.accessioned2014-12-08T15:37:51Z-
dc.date.available2014-12-08T15:37:51Z-
dc.date.issued2011en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://hdl.handle.net/11536/26030-
dc.identifier.urihttp://dx.doi.org/10.1039/c0jm04099aen_US
dc.description.abstractThe recombination reaction of injected electrons with triiodide ion in the electrolyte limits the efficiency of dye-sensitized solar cells (DSSCs). This study reports the preparation of a sponge-like and conformal TiO(2) underlayer by hydrogen peroxide oxidation of Ti foil. This underlayer serves as a charge recombination barrier layer at the nanocrystalline TiO(2)/substrate interface, and suppresses the recombination reaction. This sponge-like TiO(2) underlayer increases the electrical contact area between the Ti substrate and nanocrystalline TiO(2), helping nanocrystalline TiO(2) attach to the Ti substrate. This study compares the performance of DSSCs that were subjected to different Ti surface treatments. Electrochemical impedance spectroscopy results confirm that the proposed sponge-like TiO(2) underlayer increased the open-current voltage (V(OC)) and fill factor (FF) due to prolonged electron life time (tau(eff)), and minimized resistance at the TiO(2)/Ti interface (R(CT)). With an optimal thickness of nanocrystalline TiO(2) and concentration of I(2), we achieved a conversion efficiency of 6.75% for a back-illuminated DSSC.en_US
dc.language.isoen_USen_US
dc.titleImproved performance of flexible dye-sensitized solar cells by introducing an interfacial layer on Ti substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c0jm04099aen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume21en_US
dc.citation.issue13en_US
dc.citation.spage5114en_US
dc.citation.epage5119en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000288450200052-
dc.citation.woscount32-
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