Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiu, Ching-Hsueh | en_US |
dc.contributor.author | Lin, Da-Wei | en_US |
dc.contributor.author | Lin, Chien-Chung | en_US |
dc.contributor.author | Li, Zhen-Yu | en_US |
dc.contributor.author | Chang, Wei-Ting | en_US |
dc.contributor.author | Hsu, Hung-Wen | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Wang, Shing-Chung | en_US |
dc.contributor.author | Liao, Wei-Tsai | en_US |
dc.contributor.author | Tanikawa, Tomoyuki | en_US |
dc.contributor.author | Honda, Yoshio | en_US |
dc.contributor.author | Yamaguchi, Masahito | en_US |
dc.contributor.author | Sawaki, Nobuhiko | en_US |
dc.date.accessioned | 2014-12-08T15:37:52Z | - |
dc.date.available | 2014-12-08T15:37:52Z | - |
dc.date.issued | 2011-01-01 | en_US |
dc.identifier.issn | 1882-0778 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/APEX.4.012105 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26036 | - |
dc.description.abstract | We present a study of semi-polar (1 (1) over bar 01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current. (C) 2011 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/APEX.4.012105 | en_US |
dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000286069900008 | - |
dc.citation.woscount | 20 | - |
Appears in Collections: | Articles |
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