標題: Impact of Negative-Bias-Temperature-Instability on Channel Bulk of Polysilicon TFT by Gated PIN Diode Analysis
作者: Huang, Chen-Shuo
Liu, Po-Tsun
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 2011
摘要: In this study, negative-bias-temperature-instability (NBTI) stress induced interface, and bulk states of polycrystalline silicon (poly-Si) film were identified by using gated poly-Si P-intrinsic-N (PIN) diodes. The generation of reverse current was proportional to the quantity of defects in the poly-Si of the gated diode device. Experimental results revealed NBTI degradation has a spatial distribution in the poly-Si film and demonstrated that the resultant generation of poly-Si bulk states causes the elevated drain leakage current of thin-film transistors (TFTs). We conclude that grain boundaries, with enriched hydrogenated silicon bonds in the bulk of poly-Si, interact electrochemically with hole-carriers. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3551463] All rights reserved.
URI: http://hdl.handle.net/11536/26040
http://dx.doi.org/10.1149/1.3551463
ISSN: 1099-0062
DOI: 10.1149/1.3551463
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 5
起始頁: H194
結束頁: H196
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