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dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorCheng, Hsyi-Enen_US
dc.date.accessioned2014-12-08T15:37:57Z-
dc.date.available2014-12-08T15:37:57Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3528939en_US
dc.identifier.urihttp://hdl.handle.net/11536/26066-
dc.description.abstractIn this study, we combined atomic layer deposition and anodic aluminum oxide (AAO) on a silicon substrate and developed self-aligned TiO(2) nanotube arrays. We studied the growth mechanism of TiO(2) nanotubes on the inner wall of AAO at 100 and 400 degrees C. We found that at 100 degrees C, TiO(2) grew in a layer-by-layer manner. Therefore, it can be grown into TiO(2) nanotube arrays with very thin walls. However, at 400 degrees C, TiO(2) needs to first form a 2.5-nm amorphous layer, before becoming crystalline TiO(2) via a phase transformation, and growing into crystalline TiO(2) nanotube arrays along the preferred plane {101} by means of a space-limited growth mechanism. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3528939] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleGrowth Mechanism of TiO(2) Nanotube Arrays in Nanopores of Anodic Aluminum Oxide on Si Substrates by Atomic Layer Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3528939en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue3en_US
dc.citation.spageK58en_US
dc.citation.epageK63en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
Appears in Collections:Articles